Improving IGZO transistor PBTI reliability with hydrogen anneal achieving overdrive voltage of 1.2V for a lifetime of 5 years at 95°C
A. Chasin; J. Franco; D. Matsubayashi; S. Tyaginov; M.J. Van Setten; B. De Wachter; H. Dekkers; A. Kruv; P. Rinaudo; Y. Zhao; L. Panarella; V. Afanas’Ev; A. Pavel; Y. Wan; S. Subhechha; A. Belmonte; B. Kaczer; G. S. Kar
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE International Electron Devices Meeting (IEDM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iedm50572.2025.11353832
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Cite this source
A. Chasin; J. Franco; D. Matsubayashi; S. Tyaginov; M.J. Van Setten; B. De Wachter; H. Dekkers; A. Kruv; P. Rinaudo; Y. Zhao; L. Panarella; V. Afanas’Ev; A. Pavel; Y. Wan; S. Subhechha; A. Belmonte; B. Kaczer; G. S. Kar. Improving IGZO transistor PBTI reliability with hydrogen anneal achieving overdrive voltage of 1.2V for a lifetime of 5 years at 95°C. 2025 IEEE International Electron Devices Meeting (IEDM). 2025-12-06. https://doi.org/10.1109/iedm50572.2025.11353832