High‐Performance Ultra‐Wide‐Bandgap CaSnO 3 Metal‐Oxide‐Semiconductor Field‐Effect Transistors
Weideng Sun; Junghyun Koo; Donghwan Kim; Hongseung Lee; Rishi Raj; Chengyu Zhu; Kiyoung Lee; Andre Mkhoyan; Hagyoul Bae; Bharat Jalan; Gang Qiu
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/aelm.202500459
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Cite this source
Weideng Sun; Junghyun Koo; Donghwan Kim; Hongseung Lee; Rishi Raj; Chengyu Zhu; Kiyoung Lee; Andre Mkhoyan; Hagyoul Bae; Bharat Jalan; Gang Qiu. High‐Performance Ultra‐Wide‐Bandgap CaSnO 3 Metal‐Oxide‐Semiconductor Field‐Effect Transistors. Advanced Electronic Materials. 2025-10-16. https://doi.org/10.1002/aelm.202500459