A multi-fin normally-off β -Ga 2 O 3 vertical transistor with a breakdown voltage exceeding 10 kV
Daiki Wakimoto; Chia-Hung Lin; Kentaro Ema; Yuki Ueda; Hironobu Miyamoto; Kohei Sasaki; Akito Kuramata
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Applied Physics Express
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1882-0786/ae0d2a
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Cite this source
Daiki Wakimoto; Chia-Hung Lin; Kentaro Ema; Yuki Ueda; Hironobu Miyamoto; Kohei Sasaki; Akito Kuramata. A multi-fin normally-off β -Ga 2 O 3 vertical transistor with a breakdown voltage exceeding 10 kV. Applied Physics Express. 2025-10-01. https://doi.org/10.35848/1882-0786/ae0d2a