SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current
Kuan-Chieh Chen; Jiancheng Wu; Pheiroijam Pooja; Albert Chin
- Published
- Publisher
- MDPI AG
- Journal / collection
- Nanomaterials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/nano15090640
The original publisher provides the full text and its access options.
Cite this source
Kuan-Chieh Chen; Jiancheng Wu; Pheiroijam Pooja; Albert Chin. SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current. Nanomaterials. 2025-04-23. https://doi.org/10.3390/nano15090640