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Mechanistic evaluation of amorphous InGaZnO-based one transistor–one capacitor memory cell via fast current–voltage measurements and modeling

Juneseong Choi; Minsub Um; Hyobin Park; Jinheon Choi; Sahngik Aaron Mun; Jaewon Ham; Seoryong Park; Hyungjeung Kim; Shihyun Kim; Subin Moon; Jonghoon Shin; Cheol Seong Hwang

Published
Publisher
Royal Society of Chemistry (RSC)
Journal / collection
Nanoscale
Research area
Semiconductors
Source type
Journal article
DOI
10.1039/d6nr00995f

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Juneseong Choi; Minsub Um; Hyobin Park; Jinheon Choi; Sahngik Aaron Mun; Jaewon Ham; Seoryong Park; Hyungjeung Kim; Shihyun Kim; Subin Moon; Jonghoon Shin; Cheol Seong Hwang. Mechanistic evaluation of amorphous InGaZnO-based one transistor–one capacitor memory cell via fast current–voltage measurements and modeling. Nanoscale. 2026. https://doi.org/10.1039/d6nr00995f

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