Pronton and Heavy Ion Single-Event Effects on Tri-Gate Transistor and Planar CMOS Devices
Yining Zhang; Xiao He; Dan Yang; Na Mei; Keqing Ouyang
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE 32nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/ipfa65338.2025.11256603
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Cite this source
Yining Zhang; Xiao He; Dan Yang; Na Mei; Keqing Ouyang. Pronton and Heavy Ion Single-Event Effects on Tri-Gate Transistor and Planar CMOS Devices. 2025 IEEE 32nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). 2025-08-05. https://doi.org/10.1109/ipfa65338.2025.11256603