Write-Energy-Retention-Time Co-optimization in 2T0C AOSFET Memory via Write-Transistor V TH Tuning
Fei Huang; Yecheng Yang; Shaohao Wang
- Published
- Publisher
- IEEE
- Journal / collection
- 2026 5th International Conference on Electronics, Integrated Circuits and Communication Technology (EICCT)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/eicct69950.2026.11564093
The original publisher provides the full text and its access options.
Cite this source
Fei Huang; Yecheng Yang; Shaohao Wang. Write-Energy-Retention-Time Co-optimization in 2T0C AOSFET Memory via Write-Transistor V TH Tuning. 2026 5th International Conference on Electronics, Integrated Circuits and Communication Technology (EICCT). 2026-04-24. https://doi.org/10.1109/eicct69950.2026.11564093