A metal-semiconductor field effect transistor based on a graphene/thin Si Schottky junction for ultraviolet light detection
Qianqian Zhang; Zongwen Li; Yunfei Xie; Zhi-Xiang Zhang; Chuan Qin; Muhammad Malik; Jian Chai; Muhammad Abid Anwar; Bin Yu; Yang Xu
- Published
- Publisher
- The Japan Society of Applied Physics
- Journal / collection
- Extended Abstracts of the 2025 International Conference on Solid State Devices and Materials
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.7567/ssdm.2025.k-7-02
The original publisher provides the full text and its access options.
Cite this source
Qianqian Zhang; Zongwen Li; Yunfei Xie; Zhi-Xiang Zhang; Chuan Qin; Muhammad Malik; Jian Chai; Muhammad Abid Anwar; Bin Yu; Yang Xu. A metal-semiconductor field effect transistor based on a graphene/thin Si Schottky junction for ultraviolet light detection. Extended Abstracts of the 2025 International Conference on Solid State Devices and Materials. 2025-09-18. https://doi.org/10.7567/ssdm.2025.k-7-02