All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths
Yi Zhang; Xionghui Jia; Jiamin Chen; Minglai Li; Yanping Li; Lun Dai
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Nature Communications
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1038/s41467-026-74555-2
The original publisher provides the full text and its access options.
Cite this source
Yi Zhang; Xionghui Jia; Jiamin Chen; Minglai Li; Yanping Li; Lun Dai. All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths. Nature Communications. 2026-06-19. https://doi.org/10.1038/s41467-026-74555-2