Wafer-scale 2D MoS₂ transistors with sub-5 nm channel length and subthreshold performance beyond the silicon limit
S. Lin; T. Huang; N. Yang; X. Zheng; H. Yang; H. S. Yun; G. Turner; Y. Zhong; J. Zou; K. Zhang; J. Wu; J. Grajal; Y. C. Lin; K. Y. Xie; H. Wang; J. Kong; J. Guo; S. Shen; X. Zhang
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Nature Communications
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1038/s41467-026-77186-9
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Cite this source
S. Lin; T. Huang; N. Yang; X. Zheng; H. Yang; H. S. Yun; G. Turner; Y. Zhong; J. Zou; K. Zhang; J. Wu; J. Grajal; Y. C. Lin; K. Y. Xie; H. Wang; J. Kong; J. Guo; S. Shen; X. Zhang. Wafer-scale 2D MoS₂ transistors with sub-5 nm channel length and subthreshold performance beyond the silicon limit. Nature Communications. 2026-09-21. https://doi.org/10.1038/s41467-026-77186-9