Numerical investigation on the performance of sub-100 nm SiGe heterojunction bipolar transistor with uniaxially stressed collector and step-graded base for BiCMOS integration
Lixuan Kang; Guanyu Wang; Qi Wang; Jiahao Li; Wenxin Li; Chunyu Zhou
- Published
- Publisher
- American Vacuum Society
- Journal / collection
- Journal of Vacuum Science & Technology B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1116/6.0005577
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Cite this source
Lixuan Kang; Guanyu Wang; Qi Wang; Jiahao Li; Wenxin Li; Chunyu Zhou. Numerical investigation on the performance of sub-100 nm SiGe heterojunction bipolar transistor with uniaxially stressed collector and step-graded base for BiCMOS integration. Journal of Vacuum Science & Technology B. 2026-09-01. https://doi.org/10.1116/6.0005577