A novel high electron mobility transistor based on β - Ga 2 O 3 /κ- Ga 2 O 3 phase heterojunction
Antony David; Ankush Bag; Rahul Kumar
- Published
- Publisher
- IEEE
- Journal / collection
- 2026 International Conference on Electric Power and Renewable Energy (EPREC)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/eprec66546.2026.11412054
The original publisher provides the full text and its access options.
Cite this source
Antony David; Ankush Bag; Rahul Kumar. A novel high electron mobility transistor based on β - Ga 2 O 3 /κ- Ga 2 O 3 phase heterojunction. 2026 International Conference on Electric Power and Renewable Energy (EPREC). 2026-01-02. https://doi.org/10.1109/eprec66546.2026.11412054