Fabrication of high-performance, sub-100 nm critical dimension vertical channel-all-around indium−gallium−zinc−oxide field-effect transistor and using for DRAM unit with optimized etching condition
Yinzhi Tang; Chuanke Chen; Chunyu Zhang; Congyan Lu; Kaiping Zhang; Jiebin Niu; Shengjie Zhao; Yu Liu; Cheng Lu; Cheng Huang; Nianduan Lu; Di Geng; Ling Li
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Journal of Semiconductors
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1674-4926/26030035
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Yinzhi Tang; Chuanke Chen; Chunyu Zhang; Congyan Lu; Kaiping Zhang; Jiebin Niu; Shengjie Zhao; Yu Liu; Cheng Lu; Cheng Huang; Nianduan Lu; Di Geng; Ling Li. Fabrication of high-performance, sub-100 nm critical dimension vertical channel-all-around indium−gallium−zinc−oxide field-effect transistor and using for DRAM unit with optimized etching condition. Journal of Semiconductors. 2026-09-01. https://doi.org/10.1088/1674-4926/26030035