Analysis of operation delay and switching speed limitation due to source/drain resistance and subgap density of states in amorphous InGaZnOx/HfZrOx ferroelectric thin-film transistor
Sejun Park; Hyojin Yang; Haesung Kim; Hyunwook Jeong; Sung-Jin Choi; Dae Hwan Kim; Dong Myong Kim; Min-Kyu Park; Jong-Ho Bae
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Solid-State Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.sse.2025.109203
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Cite this source
Sejun Park; Hyojin Yang; Haesung Kim; Hyunwook Jeong; Sung-Jin Choi; Dae Hwan Kim; Dong Myong Kim; Min-Kyu Park; Jong-Ho Bae. Analysis of operation delay and switching speed limitation due to source/drain resistance and subgap density of states in amorphous InGaZnOx/HfZrOx ferroelectric thin-film transistor. Solid-State Electronics. 2025-11. https://doi.org/10.1016/j.sse.2025.109203