Indium Alloying as a Mobility Booster in IGZO Thin‐Film‐Transistor via Plasma‐Enhanced Atomic Layer Deposition Approach for BEOL Compatible Circuits
Meishan Zhang; Mei Shen; Wenhui Wang; Jun Lan; Jiqing Lu; Yida Dong; Xiao Huang; Zhixiong Li; Longyang Lin; Yida Li
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/aelm.202500162
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Cite this source
Meishan Zhang; Mei Shen; Wenhui Wang; Jun Lan; Jiqing Lu; Yida Dong; Xiao Huang; Zhixiong Li; Longyang Lin; Yida Li. Indium Alloying as a Mobility Booster in IGZO Thin‐Film‐Transistor via Plasma‐Enhanced Atomic Layer Deposition Approach for BEOL Compatible Circuits. Advanced Electronic Materials. 2025-08-21. https://doi.org/10.1002/aelm.202500162