Ferroelectric Field Effect Transistor With Annealing-Free Ultralow Process Temperature (250 °C) of Hf x Zr 1- x O 2 for BEOL Application
Yulong Dong; Danyang Chen; Tianning Cui; Jingquan Liu; Mengwei Si; Xiuyan Li
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2026.3654032
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Cite this source
Yulong Dong; Danyang Chen; Tianning Cui; Jingquan Liu; Mengwei Si; Xiuyan Li. Ferroelectric Field Effect Transistor With Annealing-Free Ultralow Process Temperature (250 °C) of Hf x Zr 1- x O 2 for BEOL Application. IEEE Transactions on Electron Devices. 2026-03. https://doi.org/10.1109/ted.2026.3654032