Surface-potential-based metal-oxide-semiconductor field-effect transistor compact model with localized states down to 4.2 K toward cryogenic applications
Lihua Xu; Jingrui Guo; Yue Zhao; Wendong Lu; Lingfei Wang; Ling Li
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0321065
The original publisher provides the full text and its access options.
Cite this source
Lihua Xu; Jingrui Guo; Yue Zhao; Wendong Lu; Lingfei Wang; Ling Li. Surface-potential-based metal-oxide-semiconductor field-effect transistor compact model with localized states down to 4.2 K toward cryogenic applications. Journal of Applied Physics. 2026-06-01. https://doi.org/10.1063/5.0321065