Atomic Layer Deposition of Disordered p‐Type SnO Using a Heteroleptic Tin(II) Precursor: Influence of Disorder on P‐Channel SnO Thin‐Film Transistor Characteristics
Benjamin J. Peek; Kham Man Niang; Benjamin McMitchell; Heath Bagshaw; Karl Dawson; Adrian Gardner; Babak Bakhit; James D. Parish; Oliver W. S. Clark; Joe C. Goodall; Andrew Brookes; Satyajit Das; Feras Alkhalil; Andrew L. Johnson; Andrew J. Flewitt; Paul R. Chalker
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/aelm.202500853
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Cite this source
Benjamin J. Peek; Kham Man Niang; Benjamin McMitchell; Heath Bagshaw; Karl Dawson; Adrian Gardner; Babak Bakhit; James D. Parish; Oliver W. S. Clark; Joe C. Goodall; Andrew Brookes; Satyajit Das; Feras Alkhalil; Andrew L. Johnson; Andrew J. Flewitt; Paul R. Chalker. Atomic Layer Deposition of Disordered p‐Type SnO Using a Heteroleptic Tin(II) Precursor: Influence of Disorder on P‐Channel SnO Thin‐Film Transistor Characteristics. Advanced Electronic Materials. 2026-04-20. https://doi.org/10.1002/aelm.202500853