Skip to content
Independent research & intelligence
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Conference paper

Gate-All-Around Nanosheet Oxide Semiconductor Transistor with Crystalline InGaOx

Masaharu Kobayashi; Anlan-Chen; Ki-Woong Park; Kota Sakai; Sunbin Hwang; Xingyu Huang; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka

Published
Publisher
IEEE
Journal / collection
2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/edtm65772.2026.11497015

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Masaharu Kobayashi; Anlan-Chen; Ki-Woong Park; Kota Sakai; Sunbin Hwang; Xingyu Huang; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka. Gate-All-Around Nanosheet Oxide Semiconductor Transistor with Crystalline InGaOx. 2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2026-03-01. https://doi.org/10.1109/edtm65772.2026.11497015

Download RIS