Study of the Field-Emission Properties of a Planar Field-Effect Transistor With a Nanoscale Vacuum Channel
Bogdan V. Lobanov; Gleb D. Demin; Nikolay A. Fillipov; Ilya D. Evsikov; Artem I. Kovalets; Nikolay A. Djuzhev
- Published
- Publisher
- IEEE
- Journal / collection
- 2026 39th International Vacuum Nanoelectronics Conference (IVNC)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/ivnc69421.2026.11660911
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Cite this source
Bogdan V. Lobanov; Gleb D. Demin; Nikolay A. Fillipov; Ilya D. Evsikov; Artem I. Kovalets; Nikolay A. Djuzhev. Study of the Field-Emission Properties of a Planar Field-Effect Transistor With a Nanoscale Vacuum Channel. 2026 39th International Vacuum Nanoelectronics Conference (IVNC). 2026-07. https://doi.org/10.1109/ivnc69421.2026.11660911