Effect of AlN Cap Layer on Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field Effect Transistor
Qianding Cheng; Ming Yang; Zhiliang Gao; Ruojue Wang; Jihao He; Feng Yan; Xu Tang; Weihong Zhang; Zijun Hu; Jingguo Mu
- Published
- Publisher
- MDPI AG
- Journal / collection
- Micromachines
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/mi16101093
The original publisher provides the full text and its access options.
Cite this source
Qianding Cheng; Ming Yang; Zhiliang Gao; Ruojue Wang; Jihao He; Feng Yan; Xu Tang; Weihong Zhang; Zijun Hu; Jingguo Mu. Effect of AlN Cap Layer on Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field Effect Transistor. Micromachines. 2025-09-26. https://doi.org/10.3390/mi16101093