Strain-engineered and polarization-switchable 2D BP/Ga2O3 heterostructures with reversible metal–semiconductor transitions
Yunxia Hao; Zihan Qu; Xi Sun; Yang Hu; Zuyu Xu; Yunlai Zhu; Yuehua Dai
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Journal of Materials Science
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s10853-025-11575-1
The original publisher provides the full text and its access options.
Cite this source
Yunxia Hao; Zihan Qu; Xi Sun; Yang Hu; Zuyu Xu; Yunlai Zhu; Yuehua Dai. Strain-engineered and polarization-switchable 2D BP/Ga2O3 heterostructures with reversible metal–semiconductor transitions. Journal of Materials Science. 2025-09-26. https://doi.org/10.1007/s10853-025-11575-1