Modelling and Parameter Extraction Methods for Emode GaN-on-Si HEMT Transistor in Microwave Integrated Circuit Design
Lavrentii Karapetian
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE East-West Design & Test Symposium (EWDTS)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/ewdts67441.2025.11303681
The original publisher provides the full text and its access options.
Cite this source
Lavrentii Karapetian. Modelling and Parameter Extraction Methods for Emode GaN-on-Si HEMT Transistor in Microwave Integrated Circuit Design. 2025 IEEE East-West Design & Test Symposium (EWDTS). 2025-12-05. https://doi.org/10.1109/ewdts67441.2025.11303681