Electron beam-induced reduction of Schottky barrier width for low contact resistance molybdenum disulfide field-effect transistor
Yajun Zhu; Hao Huang; Xue Zhang; Yujie Bai; Yufan Kang; Yongfeng Pei; Xintian Li; Shiwei Sun; Liting Liu; Bingsuo Zou; Hao Guo; Wenqing Li; Xiangdong Yang; Xiangheng Xiao
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0268857
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Yajun Zhu; Hao Huang; Xue Zhang; Yujie Bai; Yufan Kang; Yongfeng Pei; Xintian Li; Shiwei Sun; Liting Liu; Bingsuo Zou; Hao Guo; Wenqing Li; Xiangdong Yang; Xiangheng Xiao. Electron beam-induced reduction of Schottky barrier width for low contact resistance molybdenum disulfide field-effect transistor. Applied Physics Letters. 2025-09-01. https://doi.org/10.1063/5.0268857