Interfacial engineering of nitrogen-doped silicon carbide for reliable hybrid bonding in advanced semiconductor integration
Haibo Yang; Yihao Meng; Lirui Zhang; Fei Ding; Yu Zhang; Yudong Yang; Qiushi Kang; Chuan Chen; Renxi Jin; Liqiang Cao; Qidong Wang
- Published
- Publisher
- Royal Society of Chemistry (RSC)
- Journal / collection
- Journal of Materials Chemistry C
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1039/d6tc00900j
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Cite this source
Haibo Yang; Yihao Meng; Lirui Zhang; Fei Ding; Yu Zhang; Yudong Yang; Qiushi Kang; Chuan Chen; Renxi Jin; Liqiang Cao; Qidong Wang. Interfacial engineering of nitrogen-doped silicon carbide for reliable hybrid bonding in advanced semiconductor integration. Journal of Materials Chemistry C. 2026. https://doi.org/10.1039/d6tc00900j