Trends in 45 nm Integrated Circuit Single-Event Upset Rates With Stacked-Transistor Layouts
Michael D. Hu; James M. Trippe; Robert A. Reed; Brian D. Sierawski; Dennis R. Ball; Jeffrey S. Kauppila; Lloyd W. Massengill; W. Timothy Holman
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Nuclear Science
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tns.2025.3584671
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Cite this source
Michael D. Hu; James M. Trippe; Robert A. Reed; Brian D. Sierawski; Dennis R. Ball; Jeffrey S. Kauppila; Lloyd W. Massengill; W. Timothy Holman. Trends in 45 nm Integrated Circuit Single-Event Upset Rates With Stacked-Transistor Layouts. IEEE Transactions on Nuclear Science. 2026-04. https://doi.org/10.1109/tns.2025.3584671