Assessment of the Charge Trapping Behaviors in Ferroelectric Field-Effect Transistor Based Ternary Content Addressable Memory
Zishuo Guo; Guowei Ma; Enshu Xu; Pengying Chang
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/sispad66650.2025.11186328
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Cite this source
Zishuo Guo; Guowei Ma; Enshu Xu; Pengying Chang. Assessment of the Charge Trapping Behaviors in Ferroelectric Field-Effect Transistor Based Ternary Content Addressable Memory. 2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). 2025-09-24. https://doi.org/10.1109/sispad66650.2025.11186328