Read-voltage-reconfigurable logic-in-memory enabled by an ambipolar MoTe 2 split-gate transistor
Gyeong Deok Seo; Byeong Ho Yun; Ji Won Heo; Hagyoul Bae; Yoon Kim; TaeWan Kim
- Published
- Publisher
- IOP Publishing
- Journal / collection
- 2D Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/2053-1583/ae83c9
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Cite this source
Gyeong Deok Seo; Byeong Ho Yun; Ji Won Heo; Hagyoul Bae; Yoon Kim; TaeWan Kim. Read-voltage-reconfigurable logic-in-memory enabled by an ambipolar MoTe 2 split-gate transistor. 2D Materials. 2026-08-10. https://doi.org/10.1088/2053-1583/ae83c9