Low $R_{\text{ON}}Q_\mathrm{G}$ 1.2 kV-Class Normally-Off GaN Gate Injection Transistor on GaN Substrate with Asymmetric Gate Structure
Hiroyuki Handa; Naohiro Tsurumi; Masao Kawaguchi; Masahiro Ogawa; Daisuke Shibata; Yoshio Okayama; Satoshi Tamura
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.23919/ispsd62843.2025.11117424
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Cite this source
Hiroyuki Handa; Naohiro Tsurumi; Masao Kawaguchi; Masahiro Ogawa; Daisuke Shibata; Yoshio Okayama; Satoshi Tamura. Low $R_{\text{ON}}Q_\mathrm{G}$ 1.2 kV-Class Normally-Off GaN Gate Injection Transistor on GaN Substrate with Asymmetric Gate Structure. 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2025-06-01. https://doi.org/10.23919/ispsd62843.2025.11117424