A Slanted-Channel GaN p-FET with Dual-Mode Operation: Transistor-Like Forward and Diode-Like Reverse Conduction
Yang Yang; Sen Huang; Xingyu Fu; Xinhua Wang; Xinguo Gao; Ke Wei; Xinyu Liu; Xuelin Yang; Bo Shen
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Journal of Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s11664-026-13021-7
The original publisher provides the full text and its access options.
Cite this source
Yang Yang; Sen Huang; Xingyu Fu; Xinhua Wang; Xinguo Gao; Ke Wei; Xinyu Liu; Xuelin Yang; Bo Shen. A Slanted-Channel GaN p-FET with Dual-Mode Operation: Transistor-Like Forward and Diode-Like Reverse Conduction. Journal of Electronic Materials. 2026-07-18. https://doi.org/10.1007/s11664-026-13021-7