Vertical β -Ga 2 O 3 isolated source electrode field effect transistor (ISEFET) without planarization or mid-gap acceptor blocking layers
Akilesh Srikanth; Md Saklain Morshed; Chandan Joishi; Ahmad E. Islam; Siddharth Rajan
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Applied Physics Express
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1882-0786/ae9de7
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Cite this source
Akilesh Srikanth; Md Saklain Morshed; Chandan Joishi; Ahmad E. Islam; Siddharth Rajan. Vertical β -Ga 2 O 3 isolated source electrode field effect transistor (ISEFET) without planarization or mid-gap acceptor blocking layers. Applied Physics Express. 2026-09-01. https://doi.org/10.35848/1882-0786/ae9de7