A Novel SOI Nanosheet Transistor With Load-Si-Cut and Ultrathin SiGe Cladded Si Channel Structure for Enhanced Device Performance and Suppressed Process Variation
Haoyan Liu; Longyu Sun; Yan Li; Jiayi Zhang; Xin Wang; Zhenhua Wu; Xiaotong Mao; Huaizhi Luo; Fei Zhao; Yongliang Li
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2025.3564269
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Cite this source
Haoyan Liu; Longyu Sun; Yan Li; Jiayi Zhang; Xin Wang; Zhenhua Wu; Xiaotong Mao; Huaizhi Luo; Fei Zhao; Yongliang Li. A Novel SOI Nanosheet Transistor With Load-Si-Cut and Ultrathin SiGe Cladded Si Channel Structure for Enhanced Device Performance and Suppressed Process Variation. IEEE Transactions on Electron Devices. 2025-06. https://doi.org/10.1109/ted.2025.3564269