Atomic Layer Deposited Polycrystalline Ga-doped In 2 O 3 Nanosheet for Field-Effect Transistor Applications
Takanori Takahashi; Takuya Hoshii; Yuki Tsuruma; Misa Sunagawa; Shigekazu Tomai; Jongho Park; Hiroki Tamamoto; Kuniyuki Kakushima; Yukiharu Uraoka
- Published
- Publisher
- International Display Workshops General Incorporated Association
- Journal / collection
- Proceedings of the International Display Workshops
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.36463/idw.2025.0214
The original publisher provides the full text and its access options.
Cite this source
Takanori Takahashi; Takuya Hoshii; Yuki Tsuruma; Misa Sunagawa; Shigekazu Tomai; Jongho Park; Hiroki Tamamoto; Kuniyuki Kakushima; Yukiharu Uraoka. Atomic Layer Deposited Polycrystalline Ga-doped In 2 O 3 Nanosheet for Field-Effect Transistor Applications. Proceedings of the International Display Workshops. 2025-12-05. https://doi.org/10.36463/idw.2025.0214