Performance Enhancement of Slanted T-gate $\text{Al}_{0.23} \text{Ga}_{0.77} \mathrm{N} / \text{pGaN}$-Based High Electron Mobility Transistor for Power Electronics Applications
Sanyukta Gogate; R. Saravana Kumar
- Published
- Publisher
- IEEE
- Journal / collection
- 2026 International Conference on Wireless Communications Signal Processing and Networking (WiSPNET)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/wispnet69615.2026.11489422
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Cite this source
Sanyukta Gogate; R. Saravana Kumar. Performance Enhancement of Slanted T-gate $\text{Al}_{0.23} \text{Ga}_{0.77} \mathrm{N} / \text{pGaN}$-Based High Electron Mobility Transistor for Power Electronics Applications. 2026 International Conference on Wireless Communications Signal Processing and Networking (WiSPNET). 2026-03-17. https://doi.org/10.1109/wispnet69615.2026.11489422