Design and improved performance of gate stacked dual material gate all around nanowire field effect transistor with spacer based underlap extension
Hina Ismat; Singam Aruna; Srinivasa Naik K; B Balaji
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Engineering Research Express
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/2631-8695/ae539b
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Cite this source
Hina Ismat; Singam Aruna; Srinivasa Naik K; B Balaji. Design and improved performance of gate stacked dual material gate all around nanowire field effect transistor with spacer based underlap extension. Engineering Research Express. 2026-04-01. https://doi.org/10.1088/2631-8695/ae539b