Stable 3D lead bromide hybrid ferroelectric semiconductor enabled by halogen-substitution-induced confinement effect
Chang-Chun Fan; Wan-Ning Wang; Zhe-Ming Gu; Jin Xu; Wei Wang; Cheng-Dong Liu; Chao Shi
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Inorganic Chemistry Communications
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.inoche.2025.115735
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Cite this source
Chang-Chun Fan; Wan-Ning Wang; Zhe-Ming Gu; Jin Xu; Wei Wang; Cheng-Dong Liu; Chao Shi. Stable 3D lead bromide hybrid ferroelectric semiconductor enabled by halogen-substitution-induced confinement effect. Inorganic Chemistry Communications. 2026-01. https://doi.org/10.1016/j.inoche.2025.115735