Performance Enhancement of Gallium Nitride High Electron Mobility Transistor for High Frequency Applications Using AlInGaN as Back Barrier Layer
Poreddy Chaitanya Akshara; Ramakant Yadav; Vydya Ram Prasad
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202500334
The original publisher provides the full text and its access options.
Cite this source
Poreddy Chaitanya Akshara; Ramakant Yadav; Vydya Ram Prasad. Performance Enhancement of Gallium Nitride High Electron Mobility Transistor for High Frequency Applications Using AlInGaN as Back Barrier Layer. physica status solidi (a). 2025-05-10. https://doi.org/10.1002/pssa.202500334