Mechanism of Gamma-Ray Irradiation Effects on the Transient Characteristics of Photoconductive Semiconductor Switches
Yongheng Luo; Dan Zhang; Lin Wen; Jiyang Shang; Tao Yuan; Bin Wang; Dong Zhou; Qi Guo; Yudong Li
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Nuclear Science
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tns.2025.3621252
The original publisher provides the full text and its access options.
Cite this source
Yongheng Luo; Dan Zhang; Lin Wen; Jiyang Shang; Tao Yuan; Bin Wang; Dong Zhou; Qi Guo; Yudong Li. Mechanism of Gamma-Ray Irradiation Effects on the Transient Characteristics of Photoconductive Semiconductor Switches. IEEE Transactions on Nuclear Science. 2026-03. https://doi.org/10.1109/tns.2025.3621252