3-D-Stacked Oxide--Semiconductor 1T1C FeRAM With Ultralow-Voltage Operation via Coercive Field Reduction in ALD-HZO
Wei Shi; Dong Zhang; Yan Le; Zijie Zheng; Zuopu Zhou; Kaizhen Han; Qiwen Kong; Yang Feng; Chen Sun; Xiao Gong
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2026.3721040
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Cite this source
Wei Shi; Dong Zhang; Yan Le; Zijie Zheng; Zuopu Zhou; Kaizhen Han; Qiwen Kong; Yang Feng; Chen Sun; Xiao Gong. 3-D-Stacked Oxide--Semiconductor 1T1C FeRAM With Ultralow-Voltage Operation via Coercive Field Reduction in ALD-HZO. IEEE Transactions on Electron Devices. 2026-10. https://doi.org/10.1109/ted.2026.3721040