Physics-based full-band GaN high-electron-mobility transistor simulation suggests upper bound of LO phonon lifetime
Ankan Ghosh Dastider; Matt Grupen; Ashwin Tunga; Shaloo Rakheja
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0315424
The original publisher provides the full text and its access options.
Cite this source
Ankan Ghosh Dastider; Matt Grupen; Ashwin Tunga; Shaloo Rakheja. Physics-based full-band GaN high-electron-mobility transistor simulation suggests upper bound of LO phonon lifetime. Journal of Applied Physics. 2026-02-18. https://doi.org/10.1063/5.0315424