Vertical Ferroelectric–Metal Field-Effect Transistor (V-FeMFET) With Channel-All-Around (CAA) Structure
Heebum Kang; Seungmin Kang; Kihoon Kim; Jiwon Han; Minseok Kim; Hyeokjun You; Sangwan Kim; Sihyun Kim
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2026.3662671
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Cite this source
Heebum Kang; Seungmin Kang; Kihoon Kim; Jiwon Han; Minseok Kim; Hyeokjun You; Sangwan Kim; Sihyun Kim. Vertical Ferroelectric–Metal Field-Effect Transistor (V-FeMFET) With Channel-All-Around (CAA) Structure. IEEE Transactions on Electron Devices. 2026-04. https://doi.org/10.1109/ted.2026.3662671