The algorithm of insulated gated bipolar transistor (IGBT) associated with the characteristic curves in the region of gate bias slightly above the internal threshold voltage
Hsin-Chia Yang; Sung-Ching Chi; Pei-Jun Yang
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Japanese Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1347-4065/ae4308
The original publisher provides the full text and its access options.
Cite this source
Hsin-Chia Yang; Sung-Ching Chi; Pei-Jun Yang. The algorithm of insulated gated bipolar transistor (IGBT) associated with the characteristic curves in the region of gate bias slightly above the internal threshold voltage. Japanese Journal of Applied Physics. 2026-03-31. https://doi.org/10.35848/1347-4065/ae4308