Skip to content
Independent research & intelligence
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

Dual modulation vertical transistor fabricated by CVD grown CsPbBr3 as channel layer and MWCNT as source electrode

Bingxue Liu; Chandrasekar Perumalveeramalai; Chuanbo Li; Peipei Ma; Bin Zou

Published
Publisher
Elsevier BV
Journal / collection
Colloids and Surfaces A: Physicochemical and Engineering Aspects
Research area
Semiconductors
Source type
Journal article
DOI
10.1016/j.colsurfa.2026.139771

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Bingxue Liu; Chandrasekar Perumalveeramalai; Chuanbo Li; Peipei Ma; Bin Zou. Dual modulation vertical transistor fabricated by CVD grown CsPbBr3 as channel layer and MWCNT as source electrode. Colloids and Surfaces A: Physicochemical and Engineering Aspects. 2026-05. https://doi.org/10.1016/j.colsurfa.2026.139771

Download RIS