Impact of area ratio in oxide-semiconductor FeFET synapses with a metal-ferroelectric-metal-insulator-semiconductor structure for neuromorphic application
Yu-Xi Yang; Jia-Cheng Li; Feng Wang; Yi-Yan Cai; Hsiao-Hsuan Hsu; Tian-Tong Cheng; Qiang Li; Zhi-Wei Zheng
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Physica Scripta
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1402-4896/adf41e
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Cite this source
Yu-Xi Yang; Jia-Cheng Li; Feng Wang; Yi-Yan Cai; Hsiao-Hsuan Hsu; Tian-Tong Cheng; Qiang Li; Zhi-Wei Zheng. Impact of area ratio in oxide-semiconductor FeFET synapses with a metal-ferroelectric-metal-insulator-semiconductor structure for neuromorphic application. Physica Scripta. 2025-08-01. https://doi.org/10.1088/1402-4896/adf41e