Random Telegraph Noise Due to Dielectric-Semiconductor Interface Traps in MOS Transistors
Deepjyoti Deb; Rupam Goswami; Ratul K. Baruah
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Dielectrics and Electrical Insulation
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tdei.2024.3491672
The original publisher provides the full text and its access options.
Cite this source
Deepjyoti Deb; Rupam Goswami; Ratul K. Baruah. Random Telegraph Noise Due to Dielectric-Semiconductor Interface Traps in MOS Transistors. IEEE Transactions on Dielectrics and Electrical Insulation. 2025-06. https://doi.org/10.1109/tdei.2024.3491672