Geometrical Design Schemes for the 2T0C DRAM Cell Using a Vertical Stack Transistor with a Distinctive Single IGZO Active Layer
Ji-Won Kang; Chi-Sun Hwang; Sung-Min Yoon
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Materials & Interfaces
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsami.6c01738
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Cite this source
Ji-Won Kang; Chi-Sun Hwang; Sung-Min Yoon. Geometrical Design Schemes for the 2T0C DRAM Cell Using a Vertical Stack Transistor with a Distinctive Single IGZO Active Layer. ACS Applied Materials & Interfaces. 2026-04-02. https://doi.org/10.1021/acsami.6c01738