Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2025.3562473
The original publisher provides the full text and its access options.
Cite this source
Institute of Electrical and Electronics Engineers (IEEE). Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications. IEEE Transactions on Electron Devices. 2025-05. https://doi.org/10.1109/ted.2025.3562473