High Performance P‐Channel Transistor Based on Amorphous Tellurium Trioxide
Seungho Bang; Chaewon Lee; Deogkyu Choi; Dae Young Park; Dong Hyeon Kim; Dohyeon Lee; Dong‐Joon Yi; Jungeun Song; Seok Joon Yun; Dong‐Wook Kim; Mun Seok Jeong
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/adma.202504948
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Cite this source
Seungho Bang; Chaewon Lee; Deogkyu Choi; Dae Young Park; Dong Hyeon Kim; Dohyeon Lee; Dong‐Joon Yi; Jungeun Song; Seok Joon Yun; Dong‐Wook Kim; Mun Seok Jeong. High Performance P‐Channel Transistor Based on Amorphous Tellurium Trioxide. Advanced Materials. 2025-06-16. https://doi.org/10.1002/adma.202504948