Trench-Gate Bipolar Transistor With Partially Buried Carrier Storage Layer for Enhanced Blocking and Switching Characteristics
Changhao Wang; Jianbin Guo; Jingjing Tan; Qingqing Sun; David Wei Zhang; Hao Zhu
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2025.3552365
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Cite this source
Changhao Wang; Jianbin Guo; Jingjing Tan; Qingqing Sun; David Wei Zhang; Hao Zhu. Trench-Gate Bipolar Transistor With Partially Buried Carrier Storage Layer for Enhanced Blocking and Switching Characteristics. IEEE Transactions on Electron Devices. 2025-05. https://doi.org/10.1109/ted.2025.3552365