Tailoring oxygen vacancies in Ni-doped In 2 O 3 for improved thin-film transistor stability and performance via solution processing
Fakhari Alam; Sara Ajmal; Muhammad Asim Shahzad; Ghulam Dastgeer; Aamir Rasheed; Gang He
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Journal of Semiconductors
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1674-4926/25030033
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Cite this source
Fakhari Alam; Sara Ajmal; Muhammad Asim Shahzad; Ghulam Dastgeer; Aamir Rasheed; Gang He. Tailoring oxygen vacancies in Ni-doped In 2 O 3 for improved thin-film transistor stability and performance via solution processing. Journal of Semiconductors. 2026-02-01. https://doi.org/10.1088/1674-4926/25030033